Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, far surpassing the best performance of conventional III-V electronics. In this work, we demonstrate application scaled-up nano- microplasma switches as discrete high-performance pulsed-power sources. A prototype circuit, utilizing fabricated operating switch, shows voltage-rising-rate beyond 10 kV ns -1 15 kW peak power. The source exhibits sub-100 ps rise-time (without de-embedding). device has capability reaching exceptionally current densities up 325 mm . are compatible with planar semiconductor fabrication, enabling their integration other electronic microwave components, which opens pathways towards future ultrahigh power density